MBRA340T3 |
RFQ for MBRA340T3 Required Field |
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| Technical/Catalog Information | MBRA340T3G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 40V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 450mV @ 3A |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 300A @ 40V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AC, SMA |
| Packaging | Tape & Reel (TR) |
| Capacitance @ Vr, F | - |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MBRA340T3G MBRA340T3G MBRA340T3GOSTR ND MBRA340T3GOSTRND MBRA340T3GOSTR |
| Product | Manufacturers | Pack | D/C |
| MBRA340T3 | - | DO-214 | 06+ |
Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.
Features |
| • Small Compact Surface Mountable Package with J−Bent Leads• Rectangular Package for Automated Handling• Highly Stable Oxide Passivated Junction• Very Low Forward Voltage Drop• Guardring for Stress Protection• Pb−Free Package is Available |
| Rating | Symbol | Value | Unit |
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VR |
40 | V |
| Average Rectified Forward Current (At Rated VR, TL = 100°C) |
IO | 3.0 | A |
| Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) |
IFSM | 100 | A |
| Storage/Operating Case Temperature | Tstg, TC | −55 to +150 | °C |
| Operating Junction Temperature | TJ | −55 to +125 | °C |
| Voltage Rate of Change (Rated VR, TJ = 25°C) |
dv/dt | 10,000 | V/s |
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
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